✦ LIBER ✦
Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment: F A Stevie et al, J Vac Sci Technol, A6, 1988, 76–80
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 149 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0042-207X
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