Oxide interface studies using second har
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N.H. Tolk; M.L. Alles; R. Pasternak; X. Lu; R.D. Schrimpf; D.M. Fleetwood; R.P.
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Article
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2007
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Elsevier Science
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English
⚖ 684 KB
We report experiments using a non-invasive second harmonic generation (SHG) technique to characterize buried Si/SiO 2 interfaces and also SIMOX thin film silicon-on-insulator (SOI) wafers. The measurements demonstrate that the SHG response can provide an indication of the quality of the buried oxide