Screening of the electron–phonon interaction in GaAs heterostructures
✍ Scribed by Wu Xiaoguang; F. M. Peetees; J. T. Devreese
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 827 KB
- Volume
- 133
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
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Within the framework of the dielectric-continuum model and Loudon's uniaxial crystal model, the equation of motion for the p-polarization field in a wurtzite quasi-two-dimensional multilayer heterostructure is solved exactly for the interface opticalphonon modes. The eigenvector, the dispersion rela
The form factors of the electron-phonon interaction for GaAs/Ga \V Al V As single heterostructures have been evaluated using a finite height barrier. The calculations are performed within the extreme quantum limit approximation, assuming for the envelope electronic wavefunction a modified Fang-Howar