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Schottky barrier inhomogeneities in Au-Ni and Au-Cr contacts to InP-ohmic contact applications

✍ Scribed by Thomas Clausen; Otto Leistiko; Ib Chorkendorff; John Larsen


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
773 KB
Volume
74
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES


On barrier height inhomogeneities of Au
✍ H. Γ‡etin; E. Ayyildiz πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics