On barrier height inhomogeneities of Au
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H. Γetin; E. Ayyildiz
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Article
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2010
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Elsevier Science
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English
β 258 KB
In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics