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Schottky barrier ideality, real and imagined

✍ Scribed by H.K. Henisch; S. Rahimi; Y. Moreau; L. Szepessy


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
168 KB
Volume
27
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES


Effects of chemical treatment on barrier
✍ M. Diale; F.D. Auret πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 193 KB

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples