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Schottky barrier heights of Hg, Cd, and Zn on n-type InP(100)

✍ Scribed by Sa, C. J.; Meiners, L. G.

Book ID
119999476
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
536 KB
Volume
48
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

On barrier height inhomogeneities of Au
On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts
✍ H. Γ‡etin; E. Ayyildiz πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics