Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots
✍ Scribed by A Hattab; V Aubry-Fortuna; F Meyer; Vy Yam; Vinh Le Thanh; D Bouchier; C Clerc
- Book ID
- 104305760
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 243 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
In this work, we investigated W/ p-type Si Schottky contacts with intentional inhomogeneities beneath the interface. These inhomogeneities are related to the presence of Ge-dots located just below the contact. The size and the density of the inhomogeneities can be controlled either through the deposition conditions (Ge-coverage, here) or the thickness of the Si-cap layer. Electrical characterizations of contacts were achieved through current-voltage measurements in a temperature range 100-300 K. These experimental results are compared to numerical simulations using the Atlas-Silvaco package. To describe the contact, we have chosen a cylindrical geometry. The Schottky current takes into account the contributions of small circular patches of lower Schottky barrier height (SBH) embedded in a large area of uniform higher SBH. Our results evidence a correlation between the parameters of the Ge-dots (size, density, distance to the interface) and those of the patches introduced in the model. The well-known linear correlation between SBHs and ideality factors, F (n), is B observed for all the samples.