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Scattering of charge carriers by tin impurities in polycrystalline Si-Ge alloys

✍ Scribed by E. V. Khutsishvili; N. P. Kekelidze; V. G. Jzhakeli; M. O. Pagava


Book ID
110165673
Publisher
SP MAIK Nauka/Interperiodica
Year
2006
Tongue
English
Weight
160 KB
Volume
42
Category
Article
ISSN
0020-1685

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Effective barriers induced by confined c
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Results are presented concerning the characterization of \(\mathrm{p}-\mathrm{Si}^{2} / \mathrm{Si}_{\mathbf{1}-\mathrm{x}} \mathrm{Ge}_{\mathbf{x}} / \mathrm{Si}\) quantum wells (QW) by space charge spectroscopy. Analysis of potential barriers at the QW cnables us to determine the valence band offs