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Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

✍ Scribed by S. D. Hamieh; P. Desgreys; J. F. Naviner

Book ID
111623262
Publisher
Springer
Year
2009
Tongue
English
Weight
193 KB
Volume
73
Category
Article
ISSN
1434-6036

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## Abstract In the modeling of carbon nanotube field‐effect transistors, non‐physical boundary conditions are often employed at the borders of the simulation space. This paper investigates the consequences of imposing these boundary conditions on common geometries, and proposes solutions which redu