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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

✍ Scribed by R. A. Khabibullin; I. S. Vasil’evskii; G. B. Galiev; E. A. Klimov; D. S. Ponomarev; R. A. Lunin; V. A. Kulbachinskii

No coin nor oath required. For personal study only.

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