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Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2×2) surface reconstruction: dimer orientation, defects and antiphase boundaries

✍ Scribed by V. Derycke; P. Soukiassian; A. Mayne; G. Dujardin


Book ID
117220189
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
647 KB
Volume
446
Category
Article
ISSN
0039-6028

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Behaviour of the 3C-SiC(100) c(2 × 2) (C
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## Abstract We present a comparative study of C‐terminated and Si‐rich 3C–SiC(100) surfaces exposed to a H~2~/CH~4~ microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques. In both cases, a 5 minutes plasma ex