Behaviour of the 3C-SiC(100) c(2 × 2) (C
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Portail, M. ;Saada, S. ;Delclos, S. ;Arnault, J. C. ;Soukiassian, P. ;Bergonzo,
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Article
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2005
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John Wiley and Sons
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English
⚖ 296 KB
## Abstract We present a comparative study of C‐terminated and Si‐rich 3C–SiC(100) surfaces exposed to a H~2~/CH~4~ microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques. In both cases, a 5 minutes plasma ex