Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures
✍ Scribed by J Mori; H Asahi; M Fudeta; J.H Noh; D Watanabe; S Matsuda; K Asami; Y Narukawa; Y Kawakami; Sg Fujita; T Kaneko; S Gonda
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 594 KB
- Volume
- 159-160
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
✦ Synopsis
Ž
. Ž . GaPrInP short period superlattices SLs are grown on GaAs 311 A substrates by gas source molecular beam epitaxy Ž . Ž . Ž . MBE . Scanning tunneling microscopyrspectroscopy STMrSTS measurements show that the quantum dot QD structures are self-formed with a lateral density of ; 10 11 cm y2 . Growth temperature dependence of self-formed structures is studied with STMrSTS and clear temperature dependence is observed. Optimum growth temperature is about 4608C.
Ž . Ž . Time-resolved photoluminescence PL spectroscopy measurement on the multilayer QD MQD structures shows that the PL decay time strongly depends on emission energy and temperature, and ranges from 0.1 to 2.5 ns, which can be explained by considering the tunneling effect of carriers between QDs.