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Scaling limits and MHz operation in thiophene-based field-effect transistors

✍ Scribed by Hoppe, A. ;Balster, T. ;Muck, T. ;Wagner, V.

Book ID
105364523
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
702 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

To achieve high performance organic field effect transistors (OFETs) with enhanced currents, high switching speeds and improved integration density the channel length L is downscaled to the sub‐micrometer regime. The influence of important scaling parameters on the electrical performance of bottom contact devices is analyzed. High‐mobility oligo‐ and polythiophenes were used as semiconductor, which combine the advantages of highly ordered growth with processibility from solution. Devices with optimized parameters exhibit high switching frequencies beyond 2 MHz. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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