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Scaling analysis of surface roughness in simple models for molecular-beam epitaxy

✍ Scribed by H.C. Kang; J.W. Evans

Book ID
118365713
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
434 KB
Volume
269-270
Category
Article
ISSN
0039-6028

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The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer