Saturation values of the electron drift velocity in silicon between 300°K and 4.2°K
✍ Scribed by C. Canali; G. Ottaviani
- Publisher
- Elsevier Science
- Year
- 1970
- Tongue
- English
- Weight
- 154 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0375-9601
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