Atmospheric-pressure plasma pretreatment
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M. Eichler; B. Michel; M. Thomas; M. Gabriel; C.-P. Klages
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Article
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2008
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Elsevier Science
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English
โ 631 KB
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 ยฐC. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such