Room-temperature light-emitting diodes w
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L Vescan; O Chretien; T Stoica; E Mateeva; A MΓΌck
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Article
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2000
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Elsevier Science
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English
β 408 KB
There is an increasing interest in Si-based optoelectronics using Si 1Γx Ge x nanostructures due to the possibility of their integration with the Si technology. To overcome the problem of the indirect character of SiGe one is looking for possibilities to increase the contribution of the radiative re