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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

✍ Scribed by Robert, C.; Bondi, A.; Thanh, T. Nguyen; Even, J.; Cornet, C.; Durand, O.; Burin, J. P.; Jancu, J. M.; Guo, W.; Letoublon, A.; Folliot, H.; Boyer-Richard, S.; Perrin, M.; Chevalier, N.; Dehaese, O.; Tavernier, K.; Loualiche, S.; Le Corre, A.

Book ID: 111916058
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 425 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3601857

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