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Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

✍ Scribed by Young Min Park; Jürgen Daniel; Martin Heeney; Alberto Salleo


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
271 KB
Volume
23
Category
Article
ISSN
0935-9648

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