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Room-temperature epitaxial growth of high-quality m -plane InGaN films on ZnO substrates

✍ Scribed by Kazuma Shimomoto; Atsushi Kobayashi; Kohei Ueno; Jitsuo Ohta; Masaharu Oshima; Hiroshi Fujioka; Hidetaka Amanai; Satoru Nagao; Hideyoshi Horie


Book ID
112182841
Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
257 KB
Volume
3
Category
Article
ISSN
1862-6254

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Coherent growth of r-plane GaN films on
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## Abstract We grew semipolar __r__‐plane GaN films on ZnO substrates at room temperature (RT) by pulsed laser depositon (PLD). The structural characteristics of __r__‐plane GaN films grown on nearly lattice‐matched ZnO substrates at RT were investigated by X‐ray diffraction and reciprocal space ma