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Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts

✍ Scribed by Hamaya, Kohei; Takemoto, Gotaro; Baba, Yuzo; Kasahara, Kenji; Yamada, Shinya; Sawano, Kentarou; Miyao, Masanobu


Book ID
123401315
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
639 KB
Volume
557
Category
Article
ISSN
0040-6090

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