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Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy

✍ Scribed by Choi, H. K.; Eglash, S. J.


Book ID
121759992
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
515 KB
Volume
59
Category
Article
ISSN
0003-6951

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