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Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon

โœ Scribed by H. Labidi; K. Zellama; P. Germain; M. Astier; D. Lortigues; J.V. Bardeleben; M.L. Theye; L. Chahed; C. Godet


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
232 KB
Volume
170
Category
Article
ISSN
0921-4526

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Junction capacitance studies of deep def
โœ J.D. Cohen; A.V. Gelatos; K.K. Mahavadi; K. Zellama ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 630 KB

Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,