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Role of p-n junction inhomogeneities in the degradation of InGaAsP light-emitting diodes

✍ Scribed by V. M. Baranov; V. S. Ivanov; V. I. Irkha; A. A. Ptashchenko; B. M. Stepanov; V. A. Chapnin


Publisher
Springer US
Year
1981
Tongue
English
Weight
385 KB
Volume
35
Category
Article
ISSN
0021-9037

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