Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions
✍ Scribed by Aswal, D. K. ;Petit, C. ;Salace, G. ;Guérin, D. ;Lenfant, S. ;Yakhmi, J. V. ;Vuillaume, D.
- Book ID
- 105363697
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 728 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
We studied the influence of the end group of the alkylsilane molecule used in Self Assembled Monolayer (SAM) in Silicon/SAM/Metal junctions. By Inelastic Electron Tunneling spectroscopy (IETS), we showed the formation of a covalent bond between the molecules and the gold electrode in the case of a thiol terminated alkylsilane. By electrical characterizations, we demonstrated that the thiol group at the interface avoids diffusion of gold into the molecule even for a 3 carbons chain. For this short molecule, we observed pure tunnel conduction with barrier height at the monolayer/Si and monolayer/Au interfaces found to be respectively 2.14 and 2.56 eV. These values were obtained using Simmons equation with an effective mass parameter m * = 0.16__m__ ~e~ (m ~e~ = mass of the electron).This extends the demonstration of the excellent tunnel dielectric behavior of these organic monolayers down to 3 carbon atoms with a thiol/Au bond at the interface. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)