𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ro-vibrational modes of H2 in 4H–SiC and 2H–GaN

✍ Scribed by T.A.G. Eberlein; L. Huggett; R. Jones; P.R. Briddon

Book ID
108237319
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
181 KB
Volume
340-342
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparative study of 4H-SiC and 2H-GaN M
Comparative study of 4H-SiC and 2H-GaN MOS capacitors and FETs
✍ Chow, T. Paul ;Naik, H. ;Li, Z. 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 822 KB

## Abstract We have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐ef

Vibrational predissociation spectroscopy
Vibrational predissociation spectroscopy of (C2H4)2 and Ar—C2H4
✍ Wen-Long Liu; Kirk Kolenbrander; James M. Lisy 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 247 KB

The vibrational predisso&tion spectra of (C, H4)2 and Ar-C? H4 hwc been measured using a molecular beam apparatus and ;t tunable infrared laser (an optical parametric oscillator), near the vg (==3100 cm-') and 1~11 (=2990 cm-') modes of ethylene. The spectra are not homogeneously broadened and show