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Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects

✍ Scribed by H. Rauh; S.C. Jain; R.P. Mertens; R.J. Van Overstraeten


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
929 KB
Volume
33
Category
Article
ISSN
0038-1101

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