RF window for high power in S and X band
✍ Scribed by A.A. Mikhailichenko
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 283 KB
- Volume
- 355
- Category
- Article
- ISSN
- 0168-9002
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract A low‐temperature cofired ceramics(LTCC)‐embedded bandpass filter (BPF) using a high quality (Q) factor (130) bondwire inductor is proposed for radio frequency (RF) system‐in‐package (SiP) applications. The usage of high‐Q bondwire inductors significantly improves the passband insertion
## Abstract This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafe
## Abstract An investigation of temperature model for an AlGaN/GaN MISHFET is presented and a relative comparison is done with conventional HFET structures. The proposed analytical model demonstrates its inherent ability to operate at higher temperature. The contributions from various temperature d
The aim of this study is to find out a correlation between the physical interactions, such as adhesion energy and interfacial tension, and the friction behavior of hydrogenated DLC (diamond-like Carbon) (a-C:H) and CrAlN with lubricants for increasing the efficiency of power train. The lubricants in