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RF Power Amplifiers for Mobile Communications (Analog Circuits and Signal Processing)

✍ Scribed by Patrick Reynaert, Michiel Steyaert


Year
2006
Tongue
English
Leaves
258
Edition
1
Category
Library

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✦ Synopsis


This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.

✦ Table of Contents


Contents......Page 6
Preface......Page 10
1.1 Wireless Communication......Page 12
1.2.1 Moore’s Law......Page 13
1.2.2 RF-CMOS: Moore meets Marconi......Page 14
1.3 The Research Work......Page 15
1.4 Outline of the Work......Page 17
2.2 Mobile Communication Systems......Page 20
2.2.1 Modulated Bandpass Signals......Page 21
2.2.2 Digital Modulation......Page 24
2.2.3 Probability Density Function of the Envelope Signal......Page 26
2.3.1 Output Power......Page 27
2.3.2 Peak Output Power and Crest Factor......Page 29
2.3.4 Efficiency......Page 31
2.3.5 Efficiency and Modulated Signals......Page 34
2.3.6 Power Control......Page 35
2.3.7 Linearity......Page 37
2.3.8 Inductors, Capacitors and Quality Factor......Page 38
2.4.1 Class A......Page 41
2.4.2 Reduced Conduction Angle: Class AB, B and C......Page 44
2.4.3 Saturated Class A......Page 51
2.4.4 Harmonic Tuning for Improved Efficiency: Class F......Page 55
2.4.5 Switching Amplifiers......Page 59
2.4.6 Class D......Page 60
2.4.7 Class E......Page 62
2.4.8 Reliability......Page 66
2.5 Efficiency and Linearity......Page 69
2.5.1 Efficiency Improvement of Linear Amplifiers......Page 71
2.5.2 Linearization of Nonlinear Amplifiers......Page 73
2.6 Conclusion......Page 75
3.2.1 The Class E Requirements......Page 76
3.2.2 Existing Methods to Solve the Class E Equations......Page 79
3.2.3 A State-Space Model of the Class E Power Amplifier......Page 80
3.2.4 Limitations of the State-Space Approach......Page 85
3.3.1 Design of the Load Resistor......Page 86
3.3.2 Design of the DC-feed Inductance......Page 87
3.3.3 Design of the nMOS switch......Page 91
3.3.4 Technology Scaling......Page 95
3.3.5 Device Stacking......Page 98
3.3.6 Increasing the Operating Frequency......Page 103
3.3.7 Deviation from Class E: Class BE......Page 104
3.4.1 Integrated Inductors......Page 108
3.4.2 Decoupling and Bondwires......Page 114
3.5 Conclusion......Page 120
4.2 L-match Impedance Transformation......Page 122
4.2.1 Basic Equations......Page 123
4.2.2 Inductor Loss and Efficiency......Page 125
4.3 Power Combination......Page 129
4.3.1 Basic Equations......Page 130
4.3.2 Inductor Loss and Efficiency......Page 133
4.3.3 Multi Section Lattice-Type LC Balun......Page 137
4.3.4 Power Control......Page 139
4.3.5 Multi Section LC Balun with Non-Identical Sections......Page 142
4.4 Conclusion......Page 143
5.2.1 Basic Equations......Page 146
5.2.2 Envelope Elimination and Restoration......Page 148
5.2.3 Influence of the Driver Stages on the Overall Efficiency......Page 150
5.2.4 Implementation of the Amplitude Modulator......Page 151
5.3.1 Nonlinear Polar Modulated Power Amplifier Models......Page 160
5.3.2 Feedforward......Page 162
5.3.3 Nonlinear on-resistance......Page 166
5.3.4 Nonlinear drain-bulk junction capacitance......Page 168
5.3.5 Differential Delay......Page 169
5.3.6 Envelope Filtering......Page 170
5.3.8 Linearity Improvement Techniques......Page 177
5.4 Power Combination and Polar Modulation......Page 178
5.5.1 A single-bit RF D-to-A......Page 181
5.5.2 The Lattice-type LC balun as a multi-bit RF D-to-A......Page 183
5.6 Conclusion......Page 185
6.1 Introduction......Page 187
6.2.1 Enhanced Datarates for GSM Evolution......Page 188
6.2.2 Generation of the EDGE Signal......Page 189
6.2.3 EDGE Transmitter Linearity Requirements......Page 193
6.3 A Polar Modulated Power Amplifier for EDGE......Page 195
6.3.1 Architecture......Page 196
6.3.2 Distortion......Page 197
6.4.1 Design of the RF amplifier......Page 202
6.4.2 Design of the Linear Amplitude Modulator......Page 206
6.5.1 Measurement Setup......Page 209
6.5.2 Constant Envelope Measurements......Page 211
6.5.3 AM-AM and AM-PM Distortion Measurement......Page 212
6.5.4 EDGE Measurements......Page 214
6.5.5 16-QAM Modulation and Two-Tone Test......Page 219
6.6 Architectural Improvements......Page 220
6.7 Comparison with Other EDGE Solutions......Page 222
6.8 Conclusion......Page 223
7.2 The Bluetooth System......Page 225
7.2.1 Modulation......Page 226
7.2.3 Spectral Purity and Spurious Emissions......Page 227
7.3 Circuit Implementation......Page 228
7.4 Layout Aspects......Page 230
7.5.1 Output Power and Efficiency......Page 232
7.5.2 Bluetooth Measurements......Page 234
7.6 Comparison with Other Work......Page 235
7.7 Conclusion......Page 237
8.1 Main Contributions and Achievements......Page 240
8.2 Epilogue......Page 242
List of Abbreviations and Symbols......Page 243
References......Page 247
D......Page 256
P......Page 257
Z......Page 258


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