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Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3 Thin Films for Low Cost Nonvolatile Memories

✍ Scribed by Moreno, César; Munuera, Carmen; Valencia, Sergio; Kronast, Florian; Obradors, Xavier; Ocal, Carmen


Book ID
115476560
Publisher
American Chemical Society
Year
2010
Tongue
English
Weight
635 KB
Volume
10
Category
Article
ISSN
1530-6984

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The magnetoresistance of textured and non-textured polycrystalline thin films of La 0.7 Sr 0.3 MnO 3 has been measured in pulsed magnetic fields up to 60 T between 4.2 and 300 K. The non-textured film shows a linear increase with increasing field of the magnetoconductance at low temperatures which i