though functional, yielded lower currents (for similar device geometry) than the mixed-metal contacts, and therefore inferior device characteristics.
Characterization: Thermogravimetric analysis (TGA) scans were performed using a TA Instruments TGA-2950. The TGA was run using a 2 C min Β±1 ramp rate and a flowing nitrogen atmosphere. Powder X-ray diffraction was performed using a Siemens D5000 diffractometer. MEIS analysis was performed with 200 keV protons using an electrostatic energy analyzer at a scattering angle of 120. The large scattering angle was chosen to minimize overlap between the In and Se peaks. The system was calibrated to better than 5 % accuracy using a SiO 2 film of known thickness. TFT devices were tested using a Hew-lettΒ±Packard 4145B semiconductor analyzer, employing a medium integration time (16.7 ms) during the measurement. Devices exhibited substantial sensitivity to air exposure after fabrication, with the mobility and current being substantially reduced upon extensive exposure to the ambient atmosphere (whether or not the device was being operated). Consequently, devices were maintained and measurements were performed in a nitrogen-filled dry box.