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Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p–n junction diode

✍ Scribed by S.M Kang; T.J Eom; S.J Kim; H.W Kim; J.Y Cho; Chongmu Lee

Book ID: 113780689
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 112 KB
Volume: 84
Category: Article
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2003.11.030

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