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Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon

✍ Scribed by J.P Kleider; P Roca i Cabarrocas


Book ID
117145490
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
246 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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