✦ LIBER ✦
Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers
✍ Scribed by Okuyama, M.; Sugiyama, H.; Nakaiso, T.; Noda, M.
- Book ID
- 120365779
- Publisher
- Taylor and Francis Group
- Year
- 2001
- Tongue
- English
- Weight
- 412 KB
- Volume
- 34
- Category
- Article
- ISSN
- 1058-4587
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