Results of boron implantation into silicon diodes and metaloxide-semiconductor gate-controlled turn-off thyristors
✍ Scribed by Klaus-G. Oppermann; W.R. Fahrner
- Book ID
- 103952581
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 302 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
50 MeV boron ions have been implanted into silicon wafers homogeneously with doses between 5 x 10 II and 2 x 1014 cm :. Prior to the implantation the wafers have been processed in an integrated-circuit line to generate the early structures of the desired device. After the irradiation, processing of the devices is' continued without any specific annealing step. The forward-voltage drop, the breakdown voltage and the switching behaviour of metal-oxide-semiconductor gate-controlled turnoff thyristors and diodes have been investigated. It is shown that megaelectronvolt ion implantation into silicon is a promising way of creating structures buried within the bulk material of power devices.