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Restructuring and self-organization in reactions on metal surfaces

✍ Scribed by G. Ertl


Publisher
Elsevier Science
Year
1992
Weight
826 KB
Volume
74
Category
Article
ISSN
0304-5102

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In order to directly control the size and in particular the position ofnanostructures naturally formed on high-index semiconductor surfaces during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), the growth on patterned high-index GaAs substrates is investigated. During MBE