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Response to “Comment on ‘Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses’” [J. Appl. Phys. 112, 076101 (2012)]

✍ Scribed by Paterson, G. W.; Long, A. R.


Book ID
121727477
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
267 KB
Volume
112
Category
Article
ISSN
0021-8979

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