Resonant tunneling through AlxGa1−xAsGaAs heterostructures
✍ Scribed by Luiz A. Cury; Nelson Studart
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 315 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0749-6036
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📜 SIMILAR VOLUMES
Electron and hole tunneling transfer processes in asymmetric double quantum well structures are investigated by time-resolved picosecond photoluminescence. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Electron transfer times become considerably faste
## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.