Raman Scattering Study of Type II GaInAs
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V. Vorlícek; K.D. Moiseev; M.P. Mikhailova; Yu.P. Yakovlev; E. Hulicius; T. Šime
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Article
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2002
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John Wiley and Sons
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English
⚖ 104 KB
Ga 1-x In x As y Sb 1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-lik