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Resonant Spin-Flip Raman Scattering Studies of II–VI Semiconductor Heterostructures

✍ Scribed by O. Z. Karimov; D. Wolverson; J. J. Davies; T. Ruf; L. N. Tenishev


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
157 KB
Volume
215
Category
Article
ISSN
0370-1972

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Ga 1-x In x As y Sb 1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-lik