✦ LIBER ✦

Resonant optical excitation and intermixing in InAs/AlAs single quantum dots

✍ Scribed by D. Sarkar; J.M. Calleja; H.P. van der Meulen; J.M. Meyer; R.J. Haug; K. Pierz

Book ID: 104085259
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 332 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.10.076

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Magneto-tunnelling spectroscopy of singl

Magneto-tunnelling spectroscopy of single self-assembled InAs quantum dots in AlAs

✍ A.S.G. Thornton; T. Ihn; P.C. Main; L. Eaves; F.W. Sheard; M. Henini 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 108 KB

Strictly Resonant Excitation of Carriers

Strictly Resonant Excitation of Carriers in Self-Assembled InAs/GaAs Quantum Dots

✍ Paillard, M. ;Marie, X. ;Vanelle, E. ;Amand, T. ;Kalevich, V.K. ;Ustinov, V.M. ; 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB 👁 2 views

Carrier Recombination in InAs/GaAs Self-

Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions

✍ Rudamas, C. ;Mart�nez-Pastor, J. ;Garc�a-Crist�bal, A. ;Roussignol, Ph. ;Garc�a, 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 82 KB 👁 2 views

Resonant excitation and anti-Stokes lumi

Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots

✍ K. Edamatsu; C. Watatani; T. Itoh; S. Shimomura; S. Hiyamizu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 150 KB

Influence of the size of self-assembled

Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling

✍ K Pierz; Z Ma; I Hapke-Wurst; U.F Keyser; U Zeitler; R.J Haug 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 189 KB

Polaron Interaction in InAs/GaAs Quantum

Polaron Interaction in InAs/GaAs Quantum Dots and Resonant Photoluminescence

✍ M. Bissiri; G. Baldassarri H.v.H.; M. Capizzi; V.M. Fomin; V.N. Gladilin; J.T. D 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 100 KB 👁 2 views

In an adiabatic approach, the efficiency of the electron-phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low-dimensional structures such as InAs/GaAs quantum dots (QDs), thi