Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300°K : S. M. Sze and J. C. Irvin, Solid-St. Electron.11 (1968), p. 599

• Publisher: Elsevier Science
• Year: 1968
• Tongue: English
• Weight: 98 KB
• Volume: 7
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(68)90144-3