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Resistive transition in TlBiSrCaCuO thin films in magnetic fields

โœ Scribed by H. Takei; H. Kugai; Y. Torii; K. Tada


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
405 KB
Volume
210
Category
Article
ISSN
0921-4534

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โœฆ Synopsis


The resistive transition for a c-axis oriented (Tl, Bi)Sr,Ca,CusO, thin film with a critical temperature of 106 K was investigated in magnetic fields up to 9 T. The magnetic field-induced resistive transition shows a considerable anisotropic broadening behavior; a much broader transition in the field perpendicular to the a&plane than in a parallel field. This behavior is strongly influenced by the magnetic field component perpendicular to the ab-plane. The resistivity in magnetic fields approaches zero exponentially versus temperature. The activation energy U,(O) deduced from the slope of the Arrhenius curve is expressed by the power law of U,,(O) CC B-'. The resistive transition in magnetic fields for (Tl, Bi)Sr2Ca2Cus0, is attributed to thermally activated flux


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