Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

✍ Scribed by A. Crespo-Yepes; J. Martin-Martinez; A. Rothschild; R. Rodriguez; M. Nafria; X. Aymerich

• Book ID: 113916042
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 581 KB
• Volume: 65-66
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2011.06.033