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Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

✍ Scribed by Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

Book ID: 123099748
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 612 KB
Volume: 98
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2012.07.052

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