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Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

✍ Scribed by Jenn-Gwo Hwu; Shyh-Liang Fu


Book ID
107814798
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
851 KB
Volume
51
Category
Article
ISSN
0022-3697

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