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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage
✍ Scribed by SangBum Kim; Byoungil Lee; Asheghi, M.; Hurkx, F.; Reifenberg, J.P.; Goodson, K.E.; Wong, H.-S.P.
- Book ID
- 114620323
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 926 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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