Resist alternatives for sub-035-μm lithography by using highly attenuated radiation

Resist trimming technique in CF4/O2 high

Resist trimming technique in CF4/O2 high-density plasmas for sub-0.1 μm MOSFET fabrication using 248-nm lithography

✍ Chian-Yuh Sin; Bing-Hung Chen; W.L Loh; J Yu; P Yelehanka; L Chan 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 356 KB

Resist trimming process using CF / O has been developed for sub-0.1 mm polysilicon gate patterning using 4 2 conventional 248-nm lithography. This process allows the successful fabrication of 80-nm MOS devices. The trimming step is performed in situ as part of the polysilicon gate etching process. T