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Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling

✍ Scribed by A Nejim; N.P Barradas; C Jeynes; F Cristiano; E Wendler; K Gärtner; B.J Sealy


Book ID
114169883
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
152 KB
Volume
139
Category
Article
ISSN
0168-583X

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