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Research and production ion implanter

โœ Scribed by Whickham Technology Systems Ltd


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
237 KB
Volume
33
Category
Article
ISSN
0042-207X

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๐Ÿ“œ SIMILAR VOLUMES


Defect production and annealing in ion i
โœ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron