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Reply to “Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' ” [Phys. Status Solidi A 205, 1872 (2008)]

✍ Scribed by Kammermeier, T. ;Ney, A. ;Wieck, A. D.

Book ID
105366566
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
199 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In a comment by Gehlhoff et al. on our work on “Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN” [Phys. Status Solidi A 205, 1872 (2008)] the authors claim a contradictory explanation of angular dependent magnetic resonance measurements. Here we discuss their – solely based on computer simulations – claims. We show that an interpretation limited on magnetic impurities can hardly be used to explain the complex magnetic behavior.

📜 SIMILAR VOLUMES

Paramagnetic and ferromagnetic resonance
Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN
✍ Kammermeier, T. ;Dhar, S. ;Ney, V. ;Manuel, E. ;Ney, A. ;Ploog, K. H. ;Lo, F.-Y. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 478 KB

## Abstract Magnetic resonance studies were preformed on the dilute magnetic semiconductor Gd:GaN. In samples grown by molecular beam epitaxy resonances were observed at temperatures below 50 K. The temperature dependence of the resonance field and the line width suggest a ferromagnetic origin. No